位置：首页 > IC中文资料 > TC1N4754ATB
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SILICONPLANARPOWERZENERDIODES
| Surge SURGE COMPONENTS |  |   | |
SILICONPLANARPOWERZENERDIODES?
| SEMTECH Semtech Corporation |  | | |
1WSILICONPLANARZENERDIODES FEATURES •Siliconplanarpowerzenerdiodes Foruseinstabilizingandclippingcircuitswithhighpowerrating. •StandaardsZenervoltagetoeranceis10 AddsuffixAfor5toleranceOthertoleranceavailableuponrequest | CHENYIShanghai Lunsure Electronic Tech 商朗电子上海商朗电子科技有限公司 |  | | |
SILICONPLANARPOWERZENERDIODES *SiliconPlanarPowerZenerDiodes. *ThesediodesarealsoavaiableintheMELFcasewithtypedesignationZM4728thruZM4764. *DO-41GlassorDO-41PlasticCase | Good-Ark Good-Ark |  | | |
SILICONZENERDIODES VZ:3.3-200VoltsPD:1Watt FEATURES: *Completevoltagerange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent *Pb/RoHSFree | EIC EIC |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TAKCHEONG |
22+ |
DO-41 |
360000 |
全新原装房间现货实库实数 |
|||
SYNSEMI |
2339+ |
5323 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
MOTOROLA |
18+ |
DO41 |
12500 |
全新原装正品,本司专业配单,大单小单都配 |
|||
EIC |
22+23+ |
DO-41 |
25680 |
绝对原装正品全新进口深圳现货 |
|||
ST专营 |
2018+ |
DO-41 |
126850 |
一级代理/全新现货/长期供应! |
|||
TOS |
08+ |
SOD214 |
450000 |
||||
ST |
23+ |
15 |
16900 |
正规渠道,只有原装! |
|||
MOT |
N/A |
10 |
|||||
VISHAY/威世 |
DO-41 |
265209 |
假一罚十原包原标签常备现货! |
||||
NA |
19+ |
58687 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
TC1N4754ATB芯片相关品牌
TC1N4754ATB规格书下载地址
TC1N4754ATB参数引脚图相关
- tm7705
- tl7705
- tl494
- tl431
- tip127
- tip122
- td手机
- tda8844
- tda8361
- tda8023tt
- tda7294
- tda6101
- tda2822m
- tda2822
- tda2030功放电路图
- tda2030功放电路
- tda2030a
- tda2030
- tda2003功放电路图
- tda16846
- TC-206B
- TC206B
- TC2055
- TC2054
- TC-203
- TC-202
- TC2015
- TC2014
- TC-201
- TC200PW
- TC2002A
- TC2001
- TC2000
- TC-200
- TC200
- TC-20
- TC-1U40
- TC-1U35
- TC1N60P
- TC1N60
- TC1N5234B
- TC1N5233BTB
- TC1N5233B
- TC1N5232B
- TC1N5231B
- TC1N5230B
- TC1N5229B
- TC1N5228B
- TC1N5227B
- TC1N5226B
- TC1N5225B
- TC1N5224B
- TC1N5223B
- TC1N5222B
- TC1N5221B_10
- TC1N5221B
- TC1N4758A
- TC1N4757A
- TC1N4756A
- TC1N4755A
- TC1N4754A
- TC1N4753ATB
- TC1N4753A
- TC1N4752ATB
- TC1N4752A
- TC1N4751ATB
- TC1N4751A
- TC1N4750ATB
- TC1N4750A
- TC1N4749ATB
- TC1N4749A
- TC1N4748ATB
- TC1N4748A
- TC1N4747ATB
- TC1N4747A
- TC1N4746ATB
- TC1N4746A
- TC1N4745A
- TC1N4744ATB
- TC1N4744A
- TC1985
- TC1954
- TC1953P
- TC1953A
- TC1952
- TC1950
- TC-195
- TC1931D
- TC1920
- TC1912
- TC1910
- TC1903Z
- TC1903A
- TC1902
- TC1901
- TC1900
- TC18V
- TC18L
- TC18C47
- TC18C46
TC1N4754ATB数据表相关新闻
TC212S8F133NACKXUMA1
原装正品现货
2022-6-28TC222S16F133FACKXUMA1
原装正品现货
2022-5-26TC160G16AF-0015，TC160G41AF-1415，TC160G70AF
TC160G16AF-0015，TC160G41AF-1415，TC160G70AF
2020-4-12TC203G74ES
TC203G74ES
2019-11-11TC1426-1.2A的双路高速MOSFET驱动器
特征低的成本闭锁保护：可承受500毫安的反输出电流ESD保护..................±2千伏高峰值输出电流.................1.2A的峰值高容性负载驱动能力.................为1000pF在38nsec宽工作电压范围.................4.5V至16V的低延时.................75nsec最大独立的逻辑输入阈值电源电压输出电压摆幅25mV的范围内的接地或VDD低输出阻抗..
2013-2-24TC170-CMOS电流模式PWM控制器
TC170带来的低功耗CMOS技术电流模式开关电源控制器市场。最大供电电流为3.8毫安。双极电流模式控制集成电路要求的5倍以上的操作系统电流。图腾柱的双CMOS输出驱动电源MOSFET或双极晶体管。50nsec的典型输出上升和下降时间（1000pF的容性负载）最小化MOSFET功耗。输出峰值电流为300mA。TC170包含一个全面的系统保护阵列电路（见功能）。电流模式控制，允许用户并行电源模块。可以从属于两个或两个以上TC170控制器并行操作。电路可以工作在掌握TC170内部振荡器或外部系统振荡器。TC170经营从8V至16V电源。5.1V参考内部的2％，大大减少了外部组件计数。TC170
2012-11-25
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
