Si NPN Transistor

□ Features - High gain bandwidth product fT= 6 GHz at VCE = 3 V, IC = 10 mA fT= 7.5 GHz at VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz □ Applications - VHF and UHF

NPN SILICON RF TRANSISTOR

□ Features - High gain bandwidth product fT = 6 GHz @ VCE = 3 V, IC = 10 mA fT = 7.5 GHz @ VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz □ Applications - UHF and VHF wi

Si NPN Transistor

NPN SILICON RF TRANSISTOR

□ Features - High gain bandwidth product fT = 6 GHz @ VCE = 3 V, IC = 10 mA fT = 7.5 GHz @ VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz □ Applications - UHF and VHF wi

Si NPN Transistor

□ Features - High gain bandwidth product fT= 6 GHz at VCE = 3 V, IC = 10 mA fT= 7.5 GHz at VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz □ Applications - VHF and UHF

NPN SILICON RF TRANSISTOR

□ Features - High gain bandwidth product fT = 6 GHz @ VCE = 3 V, IC = 10 mA fT = 7.5 GHz @ VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz □ Applications - UHF and VHF wi

NPN SILICON RF TRANSISTOR

□ Features - High gain bandwidth product fT = 6 GHz @ VCE = 3 V, IC = 10 mA fT = 7.5 GHz @ VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz □ Applications - UHF and VHF wi

Si NPN Transistor

□ Features - High gain bandwidth product fT= 6 GHz at VCE = 3 V, IC = 10 mA fT= 7.5 GHz at VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz □ Applications - VHF and UHF

Si NPN Transistor

□ Features - High gain bandwidth product fT= 6 GHz at VCE = 3 V, IC = 10 mA fT= 7.5 GHz at VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz □ Applications - VHF and UHF

NPN SILICON RF TRANSISTOR

□ Features - High gain bandwidth product fT = 6 GHz @ VCE = 3 V, IC = 10 mA fT = 7.5 GHz @ VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz □ Applications - UHF and VHF wi

Security & Sound, 3 Conductor 18 AWG, BC, Shielded, CMP

Product Description Security & Commercial Audio Cable, Plenum-CMP, 3-18 AWG stranded bare copper conductors with Flamarrest® insulation, Beldfoil® shield and Flamarrest® jacket with ripcord

Security & Sound, 3 Conductor 18 AWG, TC, CMP

Product Description Security & Commercial Audio Cable, 3 Conductor 18 AWG stranded (7x26) tinned copper conductors with Flamarrest® insulation, Beldfoil® shield and Flamarrest® jacket with ripcord, Plenum rated.

Security & Sound, 3 Conductor 18 AWG BC, CMP

Product Description Security & Commercial Audio Cable, Plenum-CMP, 3-18 AWG stranded (7x26) bare copper conductors with Flamarrest® insulation, Flamarrest® jacket with ripcord

Security & Sound, 3 Conductor 18 AWG, TC, CMP

Product Description Security & Commercial Audio Cable, 3 Conductor 18 AWG stranded (7x26) tinned copper conductors with Flamarrest® insulation, Flamarrest® jacket with ripcord, Plenum rated.

Component 1 6 X 1 PAIR

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