Si NPN Transistor

□ Features - High gain bandwidth product fT= 6 GHz at VCE = 3 V, IC = 10 mA fT= 7.5 GHz at VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz □ Applications - VHF and UHF

NPN SILICON RF TRANSISTOR

□ Features - High gain bandwidth product fT = 6 GHz @ VCE = 3 V, IC = 10 mA fT = 7.5 GHz @ VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz □ Applications - UHF and VHF wi

Si NPN Transistor

NPN SILICON RF TRANSISTOR

□ Features - High gain bandwidth product fT = 6 GHz @ VCE = 3 V, IC = 10 mA fT = 7.5 GHz @ VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz □ Applications - UHF and VHF wi

Si NPN Transistor

□ Features - High gain bandwidth product fT= 6 GHz at VCE = 3 V, IC = 10 mA fT= 7.5 GHz at VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz □ Applications - VHF and UHF

NPN SILICON RF TRANSISTOR

□ Features - High gain bandwidth product fT = 6 GHz @ VCE = 3 V, IC = 10 mA fT = 7.5 GHz @ VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz □ Applications - UHF and VHF wi

Si NPN Transistor

□ Features - High gain bandwidth product fT= 6 GHz at VCE = 3 V, IC = 10 mA fT= 7.5 GHz at VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz □ Applications - VHF and UHF

NPN SILICON RF TRANSISTOR

□ Features - High gain bandwidth product fT = 6 GHz @ VCE = 3 V, IC = 10 mA fT = 7.5 GHz @ VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz □ Applications - UHF and VHF wi

NPN SILICON RF TRANSISTOR

□ Features - High gain bandwidth product fT = 6 GHz @ VCE = 3 V, IC = 10 mA fT = 7.5 GHz @ VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz □ Applications - UHF and VHF wi

Si NPN Transistor

□ Features - High gain bandwidth product fT= 6 GHz at VCE = 3 V, IC = 10 mA fT= 7.5 GHz at VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz □ Applications - VHF and UHF

Ultrahigh-Speed Switching Applications

Features • Low ON resistance. • Ultrahigh-speed switching. • 2.5V drive.

Dual N-Channel , Digital FET

General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed espec

Triggered Vacuum Gaps

The Triggered Vacuum Spark Gaps are ideal high-voltage switches for applications where a wide operating voltage range is desired. The low end of the operating voltage range is independent of the Static Breakdown Voltage (SBV). Operating ranges from 300 volts to 80 kilovolts are possible. Switching

Microprocessor CORE Voltage Regulator Multi-Phase Buck PWM Controller

The HIP6301 multi-phase PWM control IC together with its companion gate drivers, the HIP6601B, HIP6602B, HIP6603B or HIP6604B and external MOSFETs provides a precision voltage regulation system for advanced microprocessors. Features • Multi-Phase Power Conversion • Precision Channel Current S

SANKEN ELECTRIC COMPANY, LTD.

Scope : The present specifications shall only apply to sanken swtiching regulator hybrid IC, type STR-s6301.