SILICON PNP EPITAXIAL TYPE (PCT PROCESS)

PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERS. NPN COMPLEMENTS ARE TBC337 AND TBC338. FEATURES . High VCEO : -45V (TBC327) -25V (TBC328) . Low Saturation Voltage : VCE(sat)=-0.7V (Max.) at Ic=-500mA

Amplifier Transistors(PNP)

Damper diode

Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. • Glass passivated • High maximum operating temperature • Low leakage current • Excellent st

Silicon NPN Transistor Power Amp, Switch

Description: The NTE328 i a silicon NPN transistor in a TO3 type package designed for use in industrial power amplifier and switching circuit applications. Features: ● High Collector–Emitter Sustaining Voltage ● High DC Current Gain ● Low Collector–Emitter Saturation Voltage ● Fast Switching

1-LINE TO 6-LINE CLOCK DRIVER WITH SELECTABLE POLARITY

文件：101.59 Kbytes Page：7 Pages

1-LINE TO 6-LINE CLOCK DRIVER WITH SELECTABLE POLARITY

文件：101.59 Kbytes Page：7 Pages