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型号 功能描述 生产厂家 企业 LOGO 操作
TBA810P

7W AUDIO AMPLIFIER

The TBS810P is an improvement of TBA810S. The TBA810P is a monolithic integrated circuit in a 12-lead quad in-line plastic package, intended for use as a low frequency class B amplifier. Reference PDF : http://www.transkommunikation.ch/dateien/schaltungen/diverse

STMICROELECTRONICS

意法半导体

3-Pin Microprocessor Reset Monitors

The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. Features • Precision VCC Monitor for 2.5 V, 3.0 V, 3.3 V, and 5.0 V Supplies • Pre

ONSEMI

安森美半导体

3-Pin Microprocessor Reset Monitors

The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. Features • Precision VCC Monitor for 2.5 V, 3.0 V, 3.3 V, and 5.0 V Supplies • Pre

ONSEMI

安森美半导体

3-Pin Microprocessor Reset Monitors

The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. Features • Precision VCC Monitor for 2.5 V, 3.0 V, 3.3 V, and 5.0 V Supplies • Pre

ONSEMI

安森美半导体

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • High gain: |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • Fla

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • High gain: |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • Fla

NEC

瑞萨

替换型号 功能描述 生产厂家 企业 LOGO 操作

Integrated Circuit Audio Power Amplifier, 7W

NTE

MONOLITHISH INTEGRIERTE SCHALTUNG MONOLITHIC INTEGRATED CIRCUIT

TFUNK

威世

TBA810P产品属性

  • 类型

    描述

  • 型号

    TBA810P

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    7W AUDIO AMPLIFIER

更新时间:2026-5-17 16:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TBA820
25+
21
21
ST
26+
DIP
12335
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
24+
2500
自己现货
DIPTRONICS/台湾圜达
25+
DIP12
2000
全新原装正品支持含税
ST/意法
24+
SOT-23
9600
原装现货,优势供应,支持实单!
sgs
23+
dip
7000
20+
DIP
26580
全新原装长期特价销售
25+
DIP
5000
百分百原装正品 真实公司现货库存 本公司只做原装 可
ST
90+
DIP-12P
18
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SST
原厂封装
9800
原装进口公司现货假一赔百

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