位置：首页 > IC中文资料第2983页 > TB9408VA
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TB9408VA | SpecificationofGaAlAsIREmittingDiodeChip DESCRIPTION TB9408VAisaninfrared,940nmemittingdiodeinGaAlAs multiquantumwelltechnologywithhighradiantpowerand highspeed.Anodeisthebondpadontop. GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedandassume | VishayVishay Siliconix 威世科技 |  |   |
TB9408VA | SpecificationofGaAlAsIREmittingDiodeChip DESCRIPTION TB9408VAisaninfrared,940nmemittingdiodeinGaAlAs multiquantumwelltechnologywithhighradiantpowerand highspeed.Anodeisthebondpadontop. FEATURES •Packagetype:chip •Packageform:singlechip •Technology:multiquantumwell(MQW) •Dimensionschip(Lx | VishayVishay Siliconix 威世科技 | | |
TB9408VA | SpecificationofGaAlAsIREmittingDiodeChip 文件：96.12 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技 | | |
SpecificationofGaAlAsIREmittingDiodeChip DESCRIPTION TB9408VAisaninfrared,940nmemittingdiodeinGaAlAs multiquantumwelltechnologywithhighradiantpowerand highspeed.Anodeisthebondpadontop. GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedandassume | VishayVishay Siliconix 威世科技 | | | |
SpecificationofGaAlAsIREmittingDiodeChip DESCRIPTION TB9408VAisaninfrared,940nmemittingdiodeinGaAlAs multiquantumwelltechnologywithhighradiantpowerand highspeed.Anodeisthebondpadontop. FEATURES •Packagetype:chip •Packageform:singlechip •Technology:multiquantumwell(MQW) •Dimensionschip(Lx | VishayVishay Siliconix 威世科技 | | | |
SpecificationofGaAlAsIREmittingDiodeChip DESCRIPTION TB9408VAisaninfrared,940nmemittingdiodeinGaAlAs multiquantumwelltechnologywithhighradiantpowerand highspeed.Anodeisthebondpadontop. FEATURES •Packagetype:chip •Packageform:singlechip •Technology:multiquantumwell(MQW) •Dimensionschip(Lx | VishayVishay Siliconix 威世科技 | | | |
SpecificationofGaAlAsIREmittingDiodeChip DESCRIPTION TB9408VAisaninfrared,940nmemittingdiodeinGaAlAs multiquantumwelltechnologywithhighradiantpowerand highspeed.Anodeisthebondpadontop. GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedandassume | VishayVishay Siliconix 威世科技 | | | |
SpecificationofGaAlAsIREmittingDiodeChip 文件：96.12 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技 | | | |
HighPerformInstr,1Pr#20StrTC,PVCInsE2,PVCJkt,PLTC ProductDescription HighPerformanceInstrumentation,1Pair20AWG(19x32)TinnedCopper,PVCInsulationE2ColorCode,PVCOuterJacket,PLTC | BELDEN Belden Inc. |  | | |
MACHINESCREWPANPHILLIPS10-32 文件：130.87 Kbytes Page：1 Pages | KEYSTONEKeystone Electronics Corp. Keystone公司Keystone Electronics有限公司 |  | | |
6-32BINDINGHEADSCREW 文件：248.52 Kbytes Page：1 Pages | KEYSTONEKeystone Electronics Corp. Keystone公司Keystone Electronics有限公司 | | | |
N-Channel30-V(D-S)MOSFET 文件：959.92 Kbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-ChannelMOSFETusesadvancedtrenchtechnology 文件：1.27037 Mbytes Page：4 Pages | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 |  | |
TB9408VA产品属性
- 类型
描述
- 型号
TB9408VA
- 制造商
Vishay Intertechnologies
- 功能描述
IR EMITTER WAFER HIGH EFFICIENCY 940NM DIODE CHIP
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MINI |
22+ |
9000 |
原装现货假一赔十 |
||||
MINI |
2021+ |
3000 |
十年专营原装现货,假一赔十 |
||||
VISHAY-威世 |
24+25+/26+27+ |
车规-光电器件 |
26800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
VISHAY/威世 |
SMD |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
MINI |
2022+ |
NA |
8600 |
原装正品,欢迎来电咨询! |
|||
VISHAY/威世 |
2021+ |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
MINI-CIRCUITS |
23+ |
6000 |
全新原装现货或订货 |
||||
MINI |
22+ |
NA |
5000 |
只做原装,价格优惠,长期供货。 |
|||
MINI-CIRCUITS |
2324+ |
NA |
78920 |
二十余载金牌老企,研究所优秀合供单位,您的原厂窗口 |
|||
Mini-circuits |
1000 |
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TB9408VA规格书下载地址
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DdatasheetPDF页码索引
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