50 - 2600 MHz, 75 Ohm Single-Ended RF Amplifier

Qorvo's TAT7460 is a 75 Ohm RF amplifier designed for use up to 2600 MHz, addressing CATV and satellite bands in a single part. The TAT7460 is fabricated using 6-inch GaAs pHEMT technology to optimize performance and cost. • 50 to 2600 MHz bandwidth\n• Low noise figure: 2.4 dB up to 1600 MHz\n• Extremely flat gain response\n• Low power consumption: 100 mA with 5 V\n• SOT-89 package;

75 5V 50 2600 MHz RF Amplifier

文件：596.16 Kbytes Page：8 Pages

50 - 2600 MHz CATV Amplifier

Qorvo's TAT7460B1A is a 75 Ohm RF Amplifier designed for use up to 2600 MHz, addressing the CATV and Satellite bands in a single part. The TAT7460B1A is fabricated using six inch GaAs pHEMT technology to optimize performance and cost. • 50–2600 MHz bandwidth\n• Low noise figure: 3.0 dB up to 1600 MHz\n• Extremely flat gain response\n• Low power consumption: 100 mA with 5 V\n• SOT-89 package;

75 5V 50 2600 MHz RF Amplifier

文件：596.16 Kbytes Page：8 Pages

75 5V 50 2600 MHz RF Amplifier

文件：603.15 Kbytes Page：7 Pages

75 5V 50 2600 MHz RF Amplifier

文件：603.15 Kbytes Page：7 Pages

75 5V 50 2600 MHz RF Amplifier

文件：603.15 Kbytes Page：7 Pages

75 5V 50 2600 MHz RF Amplifier

文件：596.16 Kbytes Page：8 Pages

InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION

DESCRIPTION The NX7660JC is a 1 625 nm newly developed Strained Multiple Quantum Well (St-MQW) structure laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of telemetry equipment. FEATURES • Output power Pf = 5 mW MIN. @ IF = 65 mA

1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX8501 Series is a 1 510 nm phase-shifted DFB (Distributed Feed-Back) laser diode with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation over wide temperature range of 0 to +65 °C. It is designed

1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX7460LE is a 1 480 nm pumping laser diode module with optical isolator for an EDFA (Er Doped optical Fiber Amplifier) that can expand the transmission span and compensate optical losses. It has a strained Multiple Quantum Well (st-MQW) DC-PBH laser diode that features high output

1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX7460LE is a 1 480 nm pumping laser diode module with optical isolator for an EDFA (Er Doped optical Fiber Amplifier) that can expand the transmission span and compensate optical losses. It has a strained Multiple Quantum Well (st-MQW) DC-PBH laser diode that features high output

1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX7460LE is a 1 480 nm pumping laser diode module with optical isolator for an EDFA (Er Doped optical Fiber Amplifier) that can expand the transmission span and compensate optical losses. It has a strained Multiple Quantum Well (st-MQW) DC-PBH laser diode that features high output