位置：首页 > IC中文资料 > TA180N055T
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TrenchGatePowerMOSFET TrenchGatePowerMOSFET N-ChannelEnhancementMode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity | IXYS IXYS Corporation |  |   | |
TrenchGatePowerMOSFET TrenchGatePowerMOSFET N-ChannelEnhancementMode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity | IXYS IXYS Corporation | | | |
TrenchGatePowerMOSFET TrenchGatePowerMOSFET N-ChannelEnhancementMode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity | IXYS IXYS Corporation | | | |
MOSFIELDEFFECTTRANSISTOR Description TheNP180N055TUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)=2.3mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=9500pFTYP.(VDS=25V) •Designedforautomotiveapplicationand | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 |  | | |
ProductScoutAutomotive 文件：5.67799 Mbytes Page：6 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
23+ |
TO-3P |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IXYS |
三年内 |
1983 |
只做原装正品 |
||||
24+ |
N/A |
72000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
IXYS |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS/艾赛斯 |
23+ |
TO-3P |
50000 |
全新原装正品现货,支持订货 |
|||
IXYS |
22+ |
TO3P3 SC653 |
9000 |
原厂渠道,现货配单 |
|||
IXYS |
20+ |
TO-3P |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
IXYS/艾赛斯 |
21+ |
TO-3P |
10000 |
原装现货假一罚十 |
|||
IXYS |
25+ |
TO-3P |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
TA180N055T芯片相关品牌
TA180N055T规格书下载地址
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DdatasheetPDF页码索引
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