Netz-Thyristor Phase Control Thyristor

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Netz-Thyristor Phase Control Thyristor

片式晶闸管

T930N 相位控制晶闸管盘具有高可靠性、坚固且密封的陶瓷外壳，外壳直径 75mm，高度 26mm。 • 在较宽的温度范围内具有 50/60 Hz 的完全阻断能力\n• 高直流电压阻断稳定性\n• 高冲击电流能力\n• 高开启 di/dt 功能\n• 高 dv/dt 功能\n\n优势:\n• 可靠性高，可以大幅度地减少维护并减少停机\n• 通过串联和并联的特殊设计，轻松实现系统功率调节\n• 由于高过载能力，可实现无熔丝设计;

SCR MODULE 3600V 2200A DO200AC

封装/外壳：TO-200AC 包装：托盘 描述：SCR MODULE 3600V 2200A DO200AC 分立半导体产品 晶闸管 - SCR - 模块

封装/外壳：TO-200AC 包装：散装 描述：SCR MODULE 3600V 2200A DO200AC 分立半导体产品 晶闸管 - SCR - 模块

30 W 925.960 MHz RF POWER AMPLIFIER

The RF Line UHF Silicon FET Power Amplifier Designed specifically for the Pan European Digital Extended EGSM base station applications at 925 – 960 MHz. The MHW930 operates from a 26 volt supply and requires 60 mW of RF input power. • Specified 26 Volt and 25 °C Characteristics:

Infrared LED

Infrared LED

LOW VOLTAGE PLL CLOCK DRIVER

Low Voltage PLL Clock Driver The MPC930/931 is a 3.3V compatible, PLL based clock driver device targeted for high performance clock applications. With output frequencies of up to 150MHz and output skews of 300ps the MPC930/931 is ideal for the most demanding clock distribution designs. The

TMOS Switching

TMOS Switching N–Channel — Enhancement

SILICON 12V HYPERABRUPT VARACTOR DIODES

Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature