ACTIVE HIGH PRECISION AMPLIFIER

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采集型隔离模块

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 550V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS=550V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS=550V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

Brown Micro Potentiometer Knob 4 pack

文件：115.47 Kbytes Page：1 Pages

ABLEITSTROM-MESSGER횆TE

文件：1.5571 Mbytes Page：8 Pages