RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed primarily for CW large- signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

SOLID TANTALUM CHIP (T494>CAPACITORS(T494 SERIES - Low ESR, Industrial Grade)

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RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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T494, Tantalum, MnO2 Tantalum, 22 uF, 10, 35 V, 7343, SMD, MnO2, Molded, Low ESR, 300 mOhms, Height Max = 4.3mm

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