丝印代码：T221；WE-DD SMT Shielded Coupled Inductor

General Properties: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

丝印代码：T221；WE-DD SMT Shielded Coupled Inductor

General Properties: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

BESS STACKED HYBRID CONNECTOR

BENEFITS • Hybrid design to integrate more pins of power & signal • Higher safety: Uses excellent conductivity contact to provide low temperature rise performance • Excellent reliability design to enable greater manufacturing tolerance • Contact insertion with ≥5 mm overlap • Floating design

TEMCo T22113 10 kVA, 277 Primary Volts x 208 Secondary Volts, 50/60 Hz, Single Phase, Aluminum

Heads up: This item is manufactured in Canada. A 25% tariff is included in the displayed price. If the tariff is removed prior to shipment, we will refund the included 25%. • 50/60 Hz\n• 150°C rise\n• 10 Year Warranty\n;

TEMCo T22116 37.5 kVA, 277 Primary Volts x 208 Secondary Volts, 50/60 Hz, Single Phase, Aluminum

Heads up: This item is manufactured in Canada. A 25% tariff is included in the displayed price. If the tariff is removed prior to shipment, we will refund the included 25%. • 50/60 Hz\n• 150°C rise\n• 10 Year Warranty\n;

64K x 16 DYNAMIC RAM FAST PAGE MODE

GENERAL DESCRIPTION The T221160A is a randomly accessed solid state memory containing 1,048,551 bits organized in a x16 configuration. The T221160A has both BYTE WRITE and WORD WRITE access cycles via two CAS pins. It offers Fast Page mode operation FEATURES • High speed access time : 25/30/35

64K x 16 DYNAMIC RAM FAST PAGE MODE

GENERAL DESCRIPTION The T221160A is a randomly accessed solid state memory containing 1,048,551 bits organized in a x16 configuration. The T221160A has both BYTE WRITE and WORD WRITE access cycles via two CAS pins. It offers Fast Page mode operation FEATURES • High speed access time : 25/30/35

64K x 16 DYNAMIC RAM FAST PAGE MODE

GENERAL DESCRIPTION The T221160A is a randomly accessed solid state memory containing 1,048,551 bits organized in a x16 configuration. The T221160A has both BYTE WRITE and WORD WRITE access cycles via two CAS pins. It offers Fast Page mode operation FEATURES • High speed access time : 25/30/35

64K x 16 DYNAMIC RAM FAST PAGE MODE

GENERAL DESCRIPTION The T221160A is a randomly accessed solid state memory containing 1,048,551 bits organized in a x16 configuration. The T221160A has both BYTE WRITE and WORD WRITE access cycles via two CAS pins. It offers Fast Page mode operation FEATURES • High speed access time : 25/30/35

64K x 16 DYNAMIC RAM FAST PAGE MODE

GENERAL DESCRIPTION The T221160A is a randomly accessed solid state memory containing 1,048,551 bits organized in a x16 configuration. The T221160A has both BYTE WRITE and WORD WRITE access cycles via two CAS pins. It offers Fast Page mode operation FEATURES • High speed access time : 25/30/35

PHASE CONTROL THYRISTORS

Phase Control Thyristors

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包装：散装 描述：TERM BLOCK 21POS 35DEG 5MM PCB 连接器，互连器件 线对板

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