T18系列一体式圆柱形传感器

\n\n• Features T-style plastic housing with 18 mm threaded lens\n\n• DC and AC models available in opposed, polarized and non-polarized retroreflective, diffuse and fixed-field sensing modes\n\n• Uses innovative dual-indicator system to take the guesswork out of monitoring sensor performance\n\n• In

T18 Series Sensors (AC Voltage)

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包装：散装 描述：EZ-BEAM T18 SERIES: EMITTER; RAN 传感器，变送器 光学传感器 - 光电，工业

T18系列一体式圆柱形传感器

\n\n• Features T-style plastic housing with 18 mm threaded lens\n\n• DC and AC models available in opposed, polarized and non-polarized retroreflective, diffuse and fixed-field sensing modes\n\n• Uses innovative dual-indicator system to take the guesswork out of monitoring sensor performance\n\n• In

包装：散装 描述：EZ-BEAM T18 SERIES: EMITTER; RAN 传感器，变送器 光学传感器 - 光电，工业

Amplifier Transistors(NPN)

Aplifier Transistors NPN Silicon

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance at 945 MHz, 28 Vol

Silicon Complementary Transistors General Purpose Amplifier, Switch

Description: The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use in general purpose amplifier and switching applications. Features: • DC Current Gain Specified to 10A • High Current Gain–Bandwidth Product: fT = 2MHz (Min) @ IC = 500mA