Infrared Emitting Diode Chip, 950 nm, GaAs

文件：86.73 Kbytes Page：4 Pages

Infrared Emitting Diode Chip, 950 nm, GaAs

文件：69.48 Kbytes Page：4 Pages

Infrared Emitting Diode Chip, 950 nm, GaAs

Infrared Emitting Diode Chip, 950 nm, GaAs

文件：69.48 Kbytes Page：4 Pages

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：PHOTO SENSOR 光电器件 LED 发射器 - 红外，紫外，可见光

Infrared Emitting Diode Chip, 950 nm, GaAs

文件：69.48 Kbytes Page：4 Pages

Infrared Emitting Diode Chip, 950 nm, GaAs

文件：86.73 Kbytes Page：4 Pages

Ultra fast low-loss rectifier

DESCRIPTION Cavity free cylindrical glass SOD81 package through Implotec™(1) technology. The SOD81 package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. FEATURES • Glass passivated • High maximum operating temperature • Low lea

Silicon MOS IC

Silicon NPN Transistor Horizontal Deflection

Description: The NTE163A is an NPN silicon transistor in a TO3 type case designed for use in large screen color deflection circuits. Features: • Collector–Emitter Voltage: VCEX = 1500V • Collector–Emitter Sustaining Voltage: VCEO(sus) = 700V • Switching Times With Inductive Loads:

Silicon NPN Phototransistor

For optical control systems Features • High sensitivity • Fast response : tr = 4 µs (typ.) • Adoption of visible light cutoff resin • Ultraminiature, thin side-view type package

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE