型号 功能描述 生产厂家 企业 LOGO 操作
T14L10

Dual-In-Line, 10 Bit

Dual-In-Line, 10 Bit R/2R Ladder Networks APPLICATIONS    10 Bit, R/2R Ladder networks for D/A and A/D converter with bi-polar or CMOS switches

VishayVishay Siliconix

威世威世科技公司

T14L10

Dual-In-Line, 10 Bit

VishayVishay Siliconix

威世威世科技公司

Dual-In-Line, 10 Bit

Dual-In-Line, 10 Bit R/2R Ladder Networks APPLICATIONS    10 Bit, R/2R Ladder networks for D/A and A/D converter with bi-polar or CMOS switches

VishayVishay Siliconix

威世威世科技公司

128K X 8 HIGH SPEED CMOS STATIC RAM

GENERAL DESCRIPTION The T14L1024A is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for use in high performance memory applications such as main memory storage and high speed communication buffers. Fabricated using high performance C

TMT

凯钰科技

128K X 8 HIGH SPEED CMOS STATIC RAM

GENERAL DESCRIPTION The T14L1024A is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for use in high performance memory applications such as main memory storage and high speed communication buffers. Fabricated using high performance C

TMT

凯钰科技

128K X 8 HIGH SPEED CMOS STATIC RAM

GENERAL DESCRIPTION The T14L1024A is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for use in high performance memory applications such as main memory storage and high speed communication buffers. Fabricated using high performance C

TMT

凯钰科技

128K X 8 HIGH SPEED CMOS STATIC RAM

GENERAL DESCRIPTION The T14L1024A is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for use in high performance memory applications such as main memory storage and high speed communication buffers. Fabricated using high performance C

TMT

凯钰科技

128K X 8 HIGH SPEED CMOS STATIC RAM

GENERAL DESCRIPTION The T14L1024A is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for use in high performance memory applications such as main memory storage and high speed communication buffers. Fabricated using high performance C

TMT

凯钰科技

128K X 8 HIGH SPEED CMOS STATIC RAM

GENERAL DESCRIPTION The T14L1024A is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for use in high performance memory applications such as main memory storage and high speed communication buffers. Fabricated using high performance C

TMT

凯钰科技

128K X 8 HIGH SPEED CMOS STATIC RAM

GENERAL DESCRIPTION The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for use in high performance memory applications such as main memory storage and high speed communication buffers. Fabricated using high performance C

TMT

凯钰科技

128K X 8 HIGH SPEED CMOS STATIC RAM

GENERAL DESCRIPTION The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for use in high performance memory applications such as main memory storage and high speed communication buffers. Fabricated using high performance C

TMT

凯钰科技

128K X 8 HIGH SPEED CMOS STATIC RAM

GENERAL DESCRIPTION The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for use in high performance memory applications such as main memory storage and high speed communication buffers. Fabricated using high performance C

TMT

凯钰科技

128K X 8 HIGH SPEED CMOS STATIC RAM

GENERAL DESCRIPTION The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for use in high performance memory applications such as main memory storage and high speed communication buffers. Fabricated using high performance C

TMT

凯钰科技

128K X 8 HIGH SPEED CMOS STATIC RAM

GENERAL DESCRIPTION The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for use in high performance memory applications such as main memory storage and high speed communication buffers. Fabricated using high performance C

TMT

凯钰科技

128K X 8 HIGH SPEED CMOS STATIC RAM

GENERAL DESCRIPTION The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for use in high performance memory applications such as main memory storage and high speed communication buffers. Fabricated using high performance C

TMT

凯钰科技

128K X 8 HIGH SPEED CMOS STATIC RAM

TMTM Electronics Inc

天微厦门天微电子有限公司

128K X 8 HIGH SPEED CMOS STATIC RAM

TMTM Electronics Inc

天微厦门天微电子有限公司

Progammable Array Logic Series 24 (PAL Series 24)

文件:448.59 Kbytes Page:14 Pages

NSC

国半

Progammable Array Logic Series 24 (PAL Series 24)

文件:448.59 Kbytes Page:14 Pages

NSC

国半

Progammable Array Logic Series 24 (PAL Series 24)

文件:448.59 Kbytes Page:14 Pages

NSC

国半

Progammable Array Logic Series 24 (PAL Series 24)

文件:448.59 Kbytes Page:14 Pages

NSC

国半

Progammable Array Logic Series 24 (PAL Series 24)

文件:448.59 Kbytes Page:14 Pages

NSC

国半

T14L10产品属性

  • 类型

    描述

  • 型号

    T14L10

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Dual-In-Line, 10 Bit

更新时间:2025-11-21 16:11:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
tm
25+
SOJ32
3629
原装优势!房间现货!欢迎来电!
TMTECH
25+23+
TSOP
35771
绝对原装正品全新进口深圳现货
TMTECA
01+
SOJ/32
22
原装现货海量库存欢迎咨询
TM
2450+
TSOP
6540
原装现货或订发货1-2周
TMT
23+
TSSOP32
5000
原装正品,假一罚十
TMT
2021+
60000
原装现货,欢迎询价
TMTECH
24+
TSOP
100
TMT
22+
TSSOP
3000
原装正品,支持实单
TMT
2025+
TSSOP32
3875
全新原厂原装产品、公司现货销售
N/A
2447
SOJ
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

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