Description

The PT3C121V protects sensitive semiconductor components from damage

or upset due to electrostatic discharge (ESD) and other voltage induced transient

events. They feature large cross-sectional area junctions for conducting high

transient currents, offer desirable electrical characteristics for board level

protection, such as fast response time, low operating voltage. It gives designer

the flexibility to protect one bi-directional line in applications where arrays are not

practical.

Feature

350W peak pulse power per line (tP = 8/20μs)

SOD-323 package

Replacement for MLV(0805)

Bidirectional configurations

Protects one power or I/O port

Low clamping voltage

RoHS compliant

Transient protection for data lines to IEC 61000-4-2(ESD)

±30KV(air), ±30KV(contact); IEC 61000-4-4 (EFT) 40A (5/50ns)

Laptop computers

Cellular phones

Digital cameras

PDAs

Applications