Description

The protects sensitive semiconductor components from

damage or upset due to electrostatic discharge ( ESD) and other voltage

induced transient events. They feature large cross-sectional area junctions for

conducting high transient currents, offer desirable electrical characteristics for

board level protection, such as fast response time, low operating voltage. It

gives designer the flexibility to protect one bi-directional line in applications

where arrays are not practical.

Feature

80W peak pulse power per line (tP = 8/20μs)

DFN1006-2L package

Replacement for MLV(0402)

Bidirectional configurations

Response time is typically < 1ns

Low clamping voltage

RoHS compliant

Transient protection for data lines to

IEC61000-4-2(ESD) ±25KV(air), ±25KV(contact);

IEC61000-4-4 (EFT) 40A (5/50ns)

Applications

Cellular phones

Portable devices

Digital cameras

Power supplies

ESDB5V0B0R3T