General Description

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.

Features

► Free from secondary breakdown

► Low input and output leakage

► Low CISS and fast switching speeds

► High input impedance and high gain

Applications

► Motor controls

► Converters

► Amplifiers

► Switches

► Power supply circuits

► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)