Description

The device in a PNP transistor manufactured using new “PB-HDC” (Power Bipolar High Density Current) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

General features

■ Very low Collector to Emitter saturation voltage

■ D.C. Current gain, hFE >100

■ 1.5 A continuous collector current

■ In compliance with the 2002/93/EC European Directive

Applications

■ Power management in portable equipment

■ Switching regulator in battery charger applications