位置:VND5E160AJ-E > VND5E160AJ-E详情

VND5E160AJ-E中文资料

厂家型号

VND5E160AJ-E

文件大小

537.07Kbytes

页面数量

37

功能描述

Double channel high side driver with analog current sense for automotive applications

功率驱动器IC DOUBLE CH HI-SIDE DR W/ANALOG CRRNT SNSE

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

STMICROELECTRONICS

VND5E160AJ-E数据手册规格书PDF详情

Features

■ General

– Inrush current active management by

power limitation

– Very low stand-by current

– 3.0 V CMOS compatible inputs

– Optimized electromagnetic emissions

– Very low electromagnetic susceptibility

– In compliance with the 2002/95/EC

european directive

– Very low current sense leakage

■ Diagnostic functions

– Proportional load current sense

– High current sense precision for wide

currents range

– Current sense disable

– Off state openload detection

– Output short to VCC detection

– Overload and short to ground (power

limitation) indication

– Thermal shutdown indication

■ Protections

– Undervoltage shutdown

– Overvoltage clamp

– Load current limitation

– Self limiting of fast thermal transients

– Protection against loss of ground and loss

of VCC

– Over-temperature shutdown with

autorestart (thermal shutdown)

– Reverse battery protected (see Application

schematic)

– Electrostatic discharge protection

VND5E160AJ-E产品属性

  • 类型

    描述

  • 型号

    VND5E160AJ-E

  • 功能描述

    功率驱动器IC DOUBLE CH HI-SIDE DR W/ANALOG CRRNT SNSE

  • RoHS

  • 制造商

    Micrel

  • 产品

    MOSFET Gate Drivers

  • 类型

    Low Cost High or Low Side MOSFET Driver

  • 电源电压-最大

    30 V

  • 电源电压-最小

    2.75 V

  • 最大工作温度

    + 85 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-8

  • 封装

    Tube

更新时间:2025-10-31 14:11:00
供应商 型号 品牌 批号 封装 库存 备注 价格
STMicroelectronics
25+
PowerSSO-12?
9350
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STMicroelectronics
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PowerSSO-12?
66800
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STMicroelectronics
24+
PowerSSO-12?
36500
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ST(意法半导体)
24+
PowerSSO-12
977
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ST(意法半导体)
24+
PowerSSO-12
5133
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ST
18+
SSOP12
85600
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ST
20+
na
65790
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ST(意法半导体)
2447
PowerSSO-12
105000
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STM
25+
SSOP-12
2000
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STMicr
25+
25000
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