N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE

■ HIGH CURRRENT POWER MOS MODULE

■ Very Low Rth JUNCTION TO CASE

■ DUAL SOURCE CONTACTS

■ VERY LARGE SOA - LARGE PEAK POWER CAPABILITY

■ ISOLATED CASE (2500V RMS)

■ EASY TO MOUNT

■ VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5ns)

■ AVALANCHE RUGGENDNESS TECHNOLOGY (SEE IRFP150 FOR RATING)

industrial applications:

■ DC/DC & DC/AC CONVERTERS

■ SMPS & UPS

■ MOTOR CONTROL

■ OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS