Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(ON) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

General features

■ Extremely high dv/dt capability

■ 100 avalanche tested

■ Gate charge minimized

■ ± 20V gate to source voltage rating

■ Low intrinsic capacitance

■ Fast body-drain diode:low trr, Qrr

Applications

■ Switching application