Features

• AEC-Q101 qualified

• Fast-recovery body diode

• Extremely low gate charge and input capacitance

• Low on-resistance

• 100 avalanche tested

• Extremely high dv/dt ruggedness

• Zener-protected

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fastrecovery

diode series. It offers very low recovery charge (Qrr) and time (trr) combined

with low RDS(on), rendering it suitable for the most demanding high-efficiency

converters and ideal for bridge topologies and ZVS phase-shift converters.

Applications

• Switching applications