Features

 AEC-Q101 qualified

 Fast-recovery body diode

 Extremely low gate charge and input

capacitance

 Low on-resistance

 100 avalanche tested

 Extremely high dv/dt ruggedness

 Zener-protected

Description

This high voltage N-channel Power MOSFET is

part of the MDmesh™ DM2 fast recovery diode

series. It offers very low recovery charge (Qrr)

and time (trr) combined with low RDS(on), rendering

it suitable for the most demanding high efficiency

converters and ideal for bridge topologies and

ZVS phase-shift converters.

Applications

 Switching applications