The third generation of MESH OVERLAY Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.

TYPICAL RDS(on) = 0.82Ω

EXTREMELY HIGH dv/dt CAPABILITY

GATE-TO-SOURCE ZENER DIODES

100 AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED