TYPICAL RDS(on) = 20 mΩ

GATE CHARGE MINIMIZED

VERY LOW INTRINSIC CAPACITANCES

VERY GOOD MANUFACTURING

REPEATIBILITY

EXCELLENT FIGURE OF MERIT (RDS*Qg)

100 AVALANCHE TESTED

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET process has specifically

been designed to minimize input capacitance and

gate charge. It is therefore suitable as primary

switch in advanced high-efficiency isolated DC-DC

converters.

APPLICATIONS

HIGH CURRENT, HIGH SPEED SWITCHING

UPS