Features

• Worldwide best RDS(on)*area amongst the

silicon based devices

• Higher VDSS rating, high dv/dt capability

• Excellent switching performance

• Easy to drive, 100 avalanche tested

Applications

• Switching applications

Description

These devices are N-channel MDmesh™ V

Power MOSFETs based on an innovative

proprietary vertical process technology, which is

combined with STMicroelectronics’ well-known

PowerMESH™ horizontal layout structure. The

resulting product has extremely low onresistance,

which is unmatched among siliconbased

Power MOSFETs, making it especially

suitable for applications which require superior

power density and outstanding efficiency.