Description

This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.

Features

■ The worldwide best RDS(on) amongst the fast

recovery diode devices in TO-247

■ 100 avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

■ High dv/dt and avalanche capabilities

Application

■ Switching applications