Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

Features

STB28N60M2

STP28N60M2 --> 650 V 0.150 Ω 22 A

STW28N60M2

• Extremely low gate charge

• Excellent output capacitance (Coss) profile

• 100 avalanche tested

• Zener-protected

Applications

• Switching applications

• LCC converters, resonant converters