Description

This device is an N-channel Power MOSFET

developed using SuperMESH™ 5 technology.

This revolutionary, avalanche-rugged, high

voltage Power MOSFET technology is based on

an innovative proprietary vertical structure. The

result is a drastic reduction in on-resistance and

ultra low gate charge for applications which

require superior power density and high

efficiency

Features

• Designed for automotive applications and

AEC-Q101 qualified

• Worldwide best FOM (figure of merit)

• Ultra low gate charge

• 100 avalanche tested

• Zener-protected

Applications

• Switching applications