Features

■ Extremely high dv/dt capability

■ Improved esd capability

■ 100 avalanche tested

■ Gate charge minimized

■ Very low intrinsic capacitances

■ Very good manufacturing reliability

Applications

■ Switching applications

Description

These devices are N-channel Zener-protected

Power MOSFETs developed using

STMicroelectronics' SuperMESH™ technology,

achieved through optimization of ST's well

established strip-based PowerMESH™ layout. In

addition to a significant reduction in onresistance,

this device is designed to ensure a

high level of dv/dt capability for the most

demanding applications.