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STU8NM60ND中文资料
STU8NM60ND数据手册规格书PDF详情
Description
The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.Strongly recommended for bridge topologies, in ZVS phase-shift converters.
Features
■ The worldwide best RDS(on)* area amongst the fast recovery diode devices
■ 100 avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche capabilities
Application
■ Switching applications
STU8NM60ND产品属性
- 类型
描述
- 型号
STU8NM60ND
- 功能描述
MOSFET N-CH 6V 7A FDMESH FDMesh
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
STMicroelectronics |
23+ |
TO251 |
50000 |
只做原装正品 |
|||
STMICROELECTRONICS |
24+ |
con |
10000 |
查现货到京北通宇商城 |
|||
ST |
22+ |
TO2513 Short Leads IPak TO251A |
9000 |
原厂渠道,现货配单 |
|||
ST/意法 |
23+ |
IPAK |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
ST/意法 |
22+ |
IPAK |
19332 |
||||
ST |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ST/意法半导体 |
23+ |
TO-251-3 |
6900 |
全新原装正品现货,支持订货 |
|||
ST/意法 |
23+ |
TO-251 |
50000 |
全新原装正品现货,支持订货 |
|||
ST/意法半导体 |
24+ |
TO-251-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
ST/意法半导体 |
24+ |
TO-251-3 |
30000 |
原装正品公司现货,假一赔十! |
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STMICROELECTRONICS相关芯片制造商
Datasheet数据表PDF页码索引
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