DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.090 Ω @ 4.5 V

■ TYPICAL RDS(on) = 0.100 Ω @ 2.7 V

■ ULTRA LOW THRESHOLD GATE DRIVE (2.7 V)

■ STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY

APPLICATIONS

■ MOBILE PHONE APPLICATIONS

■ DC-DC CONVERTERS

■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT