DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.14 Ω (@4.5V)

■ TYPICAL RDS(on) = 0.20 Ω (@2.7V)

■ ULTRA LOW THRESHOLD GATE DRIVE (2.7V)

■ STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY

APPLICATIONS

■ DC-DC CONVERTERS

■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT

■ CELLULAR