Features

• AEC-Q101 qualified

• Very low on-resistance

• Very low gate charge

• High avalanche ruggedness

• Low gate drive power loss

• Logic level

Description

This device is a dual N-channel Power MOSFET developed using the STripFET F6

technology with a new trench gate structure. The resulting Power MOSFET exhibits

very low RDS(on) in all packages.

Applications

• Switching applications