Features

■ RDS(on) * Qg industry benchmark

■ Extremely low on-resistance RDS(on)

■ High avalanche ruggedness

■ Low gate drive power losses

■ Very low switching gate charge

Application

■ Switching applications

Description

This product utilizes the 6th generation of design

rules of ST’s proprietary STripFET™ technology,

with a new gate structure.The resulting Power

MOSFET exhibits the lowest RDS(on) in a standard

package, that makes it suitable for the most

demanding DC-DC converter applications, where

high power density has to be achieved.