Features

 No reverse recovery charge in application current range

 Switching behavior independent of temperature

 Dedicated to PFC applications

 AEC-Q101 qualified

 PPAP capable

 ECOPACK®2 compliant component

Description

The SiC diode is a high voltage power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Used as a freewheeling or output rectification diode, this rectifier will enhance the performance and form factor of the targeted power supply or inverter.