Features

• No reverse recovery charge in application current range

• Switching behavior independent of temperature

• High forward surge capability

• ECOPACK2 compliant component

• Power efficient product

Description

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured

using a silicon carbide substrate. The wide band gap material allows the design of a

Schottky diode structure with a 650 V rating. Due to the Schottky construction, no

recovery is shown at turn-off and ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, the STPSC2H065 SiC diode will boost

Product status performance in hard switching conditions.

Applications

• Switch mode power supply

• PFC

• DC/DC converters

• LLC topologies

• Boost diode