Features

• No or negligible reverse recovery

• Temperature independent switching behavior

• High forward surge capability

• Operating Tj from -40 °C to 175 °C

• Power efficient product

• ECOPACK®2 compliant

Description

The STPSC16H065A SiC diode is an ultrahigh performance power Schottky diode. It

is manufactured using a silicon carbide substrate. The wide band gap material allows

the design of a Schottky diode structure with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and ringing patterns are negligible. The

minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, this ST SiC diode, packaged in

TO-247, will boost the performance in hard switching conditions. Its high forward

Product status link surge capability ensures a good robustness during transient phases.

Applications

• DC/DC converter

• High frequency inverter

• Boost PFC function