Features

• No or negligible reverse recovery

• Switching behavior independent of temperature

• Dedicated to PFC applications

• High forward surge capability

• Operating Tj from -40 °C to 175 °C

• D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.

• ECOPACK2 compliant

• Power efficient product

Description

The SiC diode is an ultra high performance power Schottky diode. It is manufactured

using a silicon carbide substrate. The wide band gap material allows the design of

a Schottky diode structure with a 650 V rating. Due to the Schottky construction,

no recovery is shown at turn-off and ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of temperature.

Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in

charging station, DC/DC, easing the compliance to IEC-60664-1.

Applications

• DC/DC converter

• High frequency inverter

• Snubber

• Boost PFC function