Features

• No or negligible reverse recovery

• Switching behavior independent of temperature

• Dedicated to PFC applications

• High forward surge capability

• Operating Tj from -40 °C to 175 °C

• D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.

• ECOPACK2 compliant component

Description

This 10 A, 650 V SiC diode is an ultra high performance power Schottky diode. It is

manufactured using a silicon carbide substrate. The wide band gap material allows

the design of a Schottky diode structure with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and ringing patterns are negligible. The

minimal capacitive turn-off behavior is independent of temperature.

Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in

charging station, DC/DC, easing the compliance to IEC-60664-1.

Applications

• DC/DC converter

• High frequency inverter

• Snubber

• Boost PFC function