DESCRIPTION

This powermos MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.

■ TYPICAL RDS(on) = 0.042Ω

■ EXTREMELY HIGH dv/dt CAPABILITY

■ VERY LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED

APPLICATIONS

■ HIGH CURRENT SWITCHING

■ UNINTERRUPTIBLE POWER SUPPLY (UPS)

■ PRIMARYSWITCH IN ISOLATED DC-DC CONVERTERS