N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 0.026 Ω

■ AVALANCHERUGGED TECHNOLOGY

■ 100 AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100°C

■ HIGH CURRENT CAPABILITY

■ 175oC OPERATING TEMPERATURE

■ HIGH dV/dt RUGGEDNESS

■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ POWER MOTOR CONTROL

■ DC-DC & DC-AC CONVERTERS

■ SYNCRONOUS RECTIFICATION