DESCRIPTION

This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less critical alignment steps therefore a remark

able manufacturing reproducibility.

■ TYPICAL RDS(on)= 0.032Ω

■ EXCEPTIONAL dv/dt CAPABILITY

■ 100 AVALANCHE TESTED

■ LOW GATE CHARGE 100°C

■ APPLICATION ORIENTED CHARACTERIZATION