N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 3.25 Ω

■ ± 30V GATE TO SOURCE VOLTAGE RATING

■ 100 AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100°C

■ LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED

■ REDUCED THRESHOLD VOLTAGE SPREAD

APPLICATIONS

■ MEDIUM CURRENT, HIGH SPEED SWITCHING

■ SWITCH MODE POWER SUPPLIES (SMPS)

■ CONSUMER AND INDUSTRIAL LIGHTING