Description

This device is an N-channel Power MOSFET

developed using MDmesh™ M2 EP enhanced

performance technology. Thanks to its strip

layout and an improved vertical structure, the

device exhibits low on-resistance, optimized

switching characteristics with very low turn-off

switching losses, rendering it suitable for the

most demanding very high frequency converters.

Features

• Extremely low gate charge

• Excellent output capacitance (COSS) profile

• Very low turn-off switching losses

• 100 avalanche tested

• Zener-protected

Applications

• Switching applications

• Tailored for Very High Frequency

Converters (f > 150 kHz)