Description

This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features

■ Exceptional dv/dt capability

■ Low gate charge at 100°C

■ Application oriented characterization

■ 100 avalanche tested

Application

■ Switching applications