位置:STP21NM60ND > STP21NM60ND详情
STP21NM60ND中文资料
STP21NM60ND数据手册规格书PDF详情
Description
The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode. It is therefore strongly recommended for bridge topologies, in ZVS phase-shift converters.
Features
■ The worldwide best RDS(on)*area amongst the fast recovery diode devices
■ 100 avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche capabilities
Application
■ Switching applications
STP21NM60ND产品属性
- 类型
描述
- 型号
STP21NM60ND
- 功能描述
MOSFET N-channel 600V, 17A FDMesh II
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
STMicroelectronics |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
ST/意法 |
25+ |
TO-220-3 |
32360 |
ST/意法全新特价STP21NM60ND即刻询购立享优惠#长期有货 |
|||
ST |
24+ |
TO-220 |
4000 |
原装原厂代理 可免费送样品 |
|||
ST |
24+ |
TO-220-3 |
990 |
||||
ST |
24+ |
TO-220-3(直引 |
990 |
原装现货假一罚十 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ST |
19+ |
TO-220 |
32000 |
原装正品,现货特价 |
|||
ST原装 |
24+ |
TO-220 |
30980 |
原装现货/放心购买 |
|||
ST |
2447 |
TO-220-3(TO-220AB) |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
STM |
25+ |
TO-220 |
326 |
就找我吧!--邀您体验愉快问购元件! |
STP21NM60ND 价格
参考价格:¥17.2660
STP21NM60ND 资料下载更多...
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STMICROELECTRONICS相关芯片制造商
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