Features

• RDS(on) * Qg industry benchmark

• Extremely low on-resistance RDS(on)

• Logic level drive

• High avalanche ruggedness

• 100 avalanche tested

Applications

• Switching applications

Description

This device is an N-channel Power MOSFET

developed using the 6th generation of STripFET™

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFET exhibits

the lowest RDS(on) in all packages.