Description

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.

Features

• 100 avalanche tested

• Extremely low on-resistance RDS(on)

• Gate charge minimized

• Very low intrinsic capacitances

• Improved diode reverse recovery characteristics

• Zener-protected

Applications

• Switching applications