Description

This device is an N-channel MDmesh™ V Power

MOSFET based on an innovative proprietary

vertical process technology, which is combined

with STMicroelectronics’ well-known

PowerMESH™ horizontal layout structure. The

resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially

suitable for applications which require superior

power density and outstanding efficiency.

Features

■ 100 avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

Applications

■ Switching applications